Dynamics of Quantum Dot Lasers on Silicon
| dc.creator | Hantschmann, Constanze | |
| dc.creator | Vasil'ev, Peter | |
| dc.creator | Chen, Siming | |
| dc.creator | Liao, Mengya | |
| dc.creator | Seeds, Alwyn | |
| dc.creator | Liu, Huiyun | |
| dc.creator | Penty, Richard | |
| dc.creator | White, Ian | |
| dc.date | 2021-02-18T00:30:12Z | |
| dc.date | 2021-02-18T00:30:12Z | |
| dc.date | 2019-07 | |
| dc.date.accessioned | 2026-08-03T03:57:30Z | |
| dc.description | InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications. | |
| dc.description | UK EPSRC (Grant No. EP/J012904/1, EP/J012815/1) | |
| dc.format | application/pdf | |
| dc.identifier | 9781728105970 | |
| dc.identifier | 2376-8614 | |
| dc.identifier | https://www.repository.cam.ac.uk/handle/1810/317811 | |
| dc.identifier | 10.17863/CAM.64926 | |
| dc.identifier.uri | https://repo.dare.co.zw/handle/123456789/183103 | |
| dc.language | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
| dc.publisher | https://doi.org/10.1109/phosst.2019.8795052 | |
| dc.rights | All rights reserved | |
| dc.subject | 51 Physical Sciences | |
| dc.subject | 5108 Quantum Physics | |
| dc.subject | 40 Engineering | |
| dc.subject | 4018 Nanotechnology | |
| dc.title | Dynamics of Quantum Dot Lasers on Silicon | |
| dc.type | Conference Object |