Rapid Vapor-Phase Deposition of High-Mobility p-Type Buffer Layers on Perovskite Photovoltaics for Efficient Semi-Transparent Devices

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dc.creatorJagt, Robert A
dc.creatorHuq, Tahmida N
dc.creatorHill, Sam A
dc.creatorThway, Maung
dc.creatorLiu, Tianyuan
dc.creatorNapari, Mari
dc.creatorRoose, Bart
dc.creatorGałkowsk, Krzysztof
dc.creatorLi, Weiwei
dc.creatorLin, Serena Fen
dc.creatorStranks, Samuel D
dc.creatorMacManus-Driscoll, Judith L
dc.creatorHoye, Robert LZ
dc.date2020-06-24T23:31:35Z
dc.date2020-06-24T23:31:35Z
dc.date2020-08-14
dc.date.accessioned2026-08-03T03:14:16Z
dc.descriptionPerovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic hole transport layer. The CuOx layer has high hole mobility (4.3 ± 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionization potential for hole extraction (5.3 ± 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate n-i-p structured PSCs into tandem configurations, as well as enable the development of other devices that need high quality, protective p-type layers.
dc.descriptionEPSRC Department Training Partnership studentship (No: EP/N509620/1), as well as Bill Welland. T.N.H. acknowledges funding from the EPSRC Centre for Doctoral Training in Graphene Technology (No. EP/L016087/1) and the Aziz Foundation. W.-W.L. and J.L.M.-D. acknowledge support from the EPSRC (Nos.: EP/L011700/1, EP/N004272/10), and the Isaac Newton Trust (Minute 13.38(k)). M.N. and J.L.M.-D. acknowledge financial support from EPSRC (No. EP/P027032/1). S. D. S. acknowledges support from the Royal Society and Tata Group (UF150033). R.L.Z.H. acknowledges support from the Royal Academy of Engineering under the Research Fellowship scheme (No.: RF\201718\1701), the Centre of Advanced Materials for Integrated Energy Systems (EPSRC Grant No. EP/P007767/1), the Isaac Newton Trust (Minute 19.07(d)), and the Kim and Juliana Silverman Research Fellowship at Downing College, Cambridge.
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dc.formatapplication/pdf
dc.identifier2380-8195
dc.identifierhttps://www.repository.cam.ac.uk/handle/1810/307242
dc.identifier10.17863/CAM.54339
dc.identifier2380-8195
dc.identifier.urihttps://repo.dare.co.zw/handle/123456789/174352
dc.languageeng
dc.publisherAmerican Chemical Society
dc.publisherhttps://doi.org/10.1021/acsenergylett.0c00763
dc.rightsAll rights reserved
dc.rightshttp://purl.org/NET/rdflicense/allrightsreserved
dc.subjectphysics.app-ph
dc.subjectphysics.app-ph
dc.titleRapid Vapor-Phase Deposition of High-Mobility p-Type Buffer Layers on Perovskite Photovoltaics for Efficient Semi-Transparent Devices
dc.typeArticle

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